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Questions about using gate driver IR2110 for driving power mosfet

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elahetal

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hello everybody,

I have some trivial questions for you.....

Suppose using a gate driver like IR2110 to drive power mosfet:

1)to change the VGS, I have to change Vcc?
If yes, can I use different Vcc for drive HO and LO independantly?

2)In datasheet, it has mentioned the IR2110 is used to drive gate voltage between 10-20....it means that I can't apply VGS less than 10 to my mosfet and then I have to change my driver?


Thanks for your help,
Ela
P.S.My field is not power electronics but I need to learn it for part of my task.
 

Re: Gate Driver IR2110

can I use different Vcc for drive HO and LO independantly?
Basical yes, although it's not reasonable for usual applications.

it means that I can't apply VGS less than 10 to my mosfet
Yes, the undervoltage lockout feature doesn't allow it.
 

    elahetal

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Re: Gate Driver IR2110

Thanks for your quick answer.

I have another question:
If I have a IC driver for low side, how can I use it for high side?
suppose that I am working with low voltage high current MOSFETS so I do not have high voltage rails, I mean I drive a half bridge circuit with voltage rails about 5-15 not more.

Sb suggested me to use a capacitor across the GS of high side and then apply the output of IC driver(low side) to the gate.IS it working? or do you have better solution for me?

Thanks,
Ela
 

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