sam_2999
Newbie level 3
I came across some papers that refers to the term stepped field plate where the gate oxide is made thicker near the drain of an LDMOS in a single or two steps (i.e. three levels of gate-oxide thickness) to increase breakdown voltage. How is this is different from LOCOS (field oxide growth)? Is there a paper or a book on fabrication that refers to that?
Thanks,
Sam
Thanks,
Sam