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Why the gate oxide is thinner than field oxide ?

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quality of field oxide vs gate oxide

i guess if the gate oxide is thick, the ability of the gate voltage to cause an inversion layer is weak.:D
 

gate oxide

I think :
first, the elctricity of the gate oxide is greater than field oxide. If the field oxide is thinner than gate oxide, the field oxide will be breakdown quicker than gate oxide while them on the same voltage.
second. if the field oxide is thinner than gate oxide, the vth of the field is lower than gate oxide. so the parasitic devices will much more, and the circuit will not on work.
 

Re: gate oxide

The gate oxide and the field oxide are totally two different thing.
If you have some knowledge of semiconductor Device Phsics and semiconductor process,you will know the gate oxide is used to form the MOS(Metal_Oxide_Semiconductor) structure . To maintain the gate Voltage's control ove the conduction channel ,the gate oxide,more precisely the gate dielectric must not be too thick,in 130nm technology the gate oxide is 1.6nm thick,in 90 nm,it is about 1.2nm.
the field oxide is used for the purpose of isolation and insulation.Isolate each transistors from each other and allow interconnect wires run on it without short. To avoid forming parasitic MOS structures in field oxide region,the field xoide is much more thick than gate oxide.
 
Re: gate oxide

m...
Another thing difference.
To prevent field oxide parasitic leakage path, channel stop implant is always used, which is opposite to thin oxide.
 

gate oxide

gate oxide is grown oxide in dry environment & its quality is very good , whereas field oxide is also grown by wet/dry process .
 

gate oxide

HI
thin filed oxide generate large parasitic capacitor too.
thin filed oxide generate parasitic MOSFET transistor too.
regards
 

Re: gate oxide

Gate oxide is, and always will be thiner than field oxide...But why?? Well the answer rely on what are they used for.
Field oxide: Isolate, IC Robustness, etc...
Gate oxide: Makes part of the conception of a MOS transistor, will be thiner with the technology scalling for current drive issues...
 

gate oxide

smaller the thickness , higher the capacitance ,more the control of gate , ..
 

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