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Diffusion of boron in silicon in TCAD Sentaurus process simulation

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Assuming no boron in the siliocn to start with, implant boron, then diffuse at 900C for 10 minutes

implant energy=35.00 dose=1.00e.+14 tilt=7.00<degree rotation=-90.00 Boron
diffuse temperature=900 time=10 mins
 
Colbhaidh said:
Assuming no boron in the siliocn to start with, implant boron, then diffuse at 900C for 10 minutes

implant energy=35.00 dose=1.00e.+14 tilt=7.00<degree rotation=-90.00 Boron
diffuse temperature=900 time=10 mins
Click to expand...

Without implantation step, is there any method for Boron Diffusion? . I mean to simulate the step as in a pure diffusion setup.

Thanks
Anwar
 

The only reason I can see for doing this would be an epi silicon process.
So to simulate an epi deposition in a boron ambient that dopes the epi-silicon, use the command:

diffuse thick=5.0<um> temperature=1090<C> time=30.0<min> epi epi_doping = {Boron = 1e18} epi_layers=100
 

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