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i need one low noise buffer to driver a large cap(about 30PF), the spec. of noise is <100uV,the spec. of GBW is about 40MHz,
anayone would like to give me an advice? thank you for reading this issue!
thank you!erikl, we do need a pin for this ldo.
---------- Post added at 02:18 ---------- Previous post was at 02:16 ----------
thank you! upvl , this structure is very interesting ,and i think it is helpful to me
thank u erikl!
i have read the paper you suggested to me, and am afraid that it may not be available for me.
my circuit need current about 20mA ,but it have a very large and very quick peak value,so this structure is not suitable because of poor transient response. the loading current change...
the digital circuits' average current is about 20mA,and the peak value is aboat
200mA,my chip is now pad-number limited,so i have no pad for ex-cap,
anyone who have ideas about cap-free ldo for my situation?
thank you!
design with TSMC 0.18um lib,
the post netlist is not hierarchy,so i use ultrasim to tradeoff the speed and accuracy
the problem is:
this mos model is binning model(scalable),there are 20 sub-models in every mos type, nch.0 , nch.1 , nch.2 .... for nch (digital nchannal transistor).
my usim_opt...
design with TSMC 0.18um lib,
the post netlist is not hierarchy,so i use ultrasim to tradeoff the speed and accuracy
the problem is:
this mos model is binning model(scalable),there are 20 sub-models in every mos type, nch.0 , nch.1 , nch.2 .... for nch (digital nchannal transistor).
my usim_opt...
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