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definitely the gm/ID should be smaller than 1/VT. Transistor should be biased in the saturation region even in weak inversion. For weak inversion, make sure the vds larger than 4*UT. I guess you connected the transistor in the diode-connected way and drive it uing a current source, so, when...
I saw your post on now newsmth, and again here.
I would say the answer probably is yes, especially when other parasitic nondominant pole or coupling exists.
In fact I am trying to find the book writen by P. G.A <gm/Id design methodology for cmos analog low power integrated circuits>. And I also appreciate other relevant materials.
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