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I was reading a Wikipedia article where I found this one
I have problem understanding this -
1. I believed in, suppose, 65nm technology the smallest gate length is 65nm. But here it says in 65nm technology, the gate length can reach as low as 25nm. Please explain this.
2. What is the pitch...
I had no intention to give an argument. Actually I learned about the fabrication steps, and here seeing some replies I couldn't make a bridge between them. That's why I asked the question.
I am still not clear about how nmos is getting affected in well proximity effect. Only the silicon area is exposed where nwell implantation is to be created. Other areas will be covered with photoresist, which will be removed by etching after well implantation is over. So the chance of atoms...
Still not clear what technology node means here? And here also there is mention that if the minimum width of any particular layer is just a few fraction of the wavelength of UV light, lithography result is not achieved as expected, most of the time the layer boundary gets burred or the drawn...
I was reading double patterning. And came to know that dividing the mask into two for lithography is basically called double patterning. But there are some reasons for doing this. One reason was sited like this: (can't remember the proper wording but trying to write what I remember and...
can you please elaborate what do you mean by current and voltage offset? Is this two the solo reason that we do matching? So for matching two transistor their W/L should be the same?
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