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hi dominik,
i got some idea about your answer, but one small doubt, u told that to avoid etching from sides we use dummies, but what about the etching effects from top and bottom
when long length metal is connected to gate of a transistor, During the Fabrication Process the large amount of charge is induced*in plasma etching, ion implantation and in other processes.*these induced ions will hit the gate directly and damage the SIO2 layer, this may effect the transistor...
hi all,
can any one tell why do we place dummies on left and right sides of layout mostly, why not on top and bottom. clear explanation please
thanks in advance.
Hi all,
can any one explain why nmos current will decrease and Pmos current will increase in shallow trench isolation. pls explain STI effect in detail.
thanks in advance.
hi guys, a help in transistor matching,
common centroid matching for 5 devices
A=4, B=256, C=20, D=20, E=640
can any one match this devices in correct pattern, hope for a soon reply
can anyone help me to get a clear cut idea of matching concepts (interdigitized and common centroid) with examples.
any documents or book to go through...
thanks in advance.
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