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Thanksssssssssssss 4 ur reply
what i understand that the body of MO1 will be always connected to node vout1 and this will be valid in the two phases??right
thanks in advance
vout1=node A =3VDD
mO1 and MO2 are the NMOS,VO1 is the node B (it takes the volts 3VDD-Vth and 5VDD-Vth)
my question is about body terminal of MO1
i wish it be more clear now
thanks 4 ur help
Thanks for ur reply
yes my circuit is a charge pump and i use the nMOS in last stage to have a voltage fluctuation......but i dont understand this statement "pre-charge node B with the body diode in phase II."
could you please make it clear for me??
thanks in advance
[B]hi all
my question is about the connection of body terminal of NMOS ( i use triple well technology;in which the body terminal of NMOS can be connected to its source)
the defination of source in circuit is the terminal that has the lowest voltage??? Am i correct??
the case in my circuit is as...
Hi all
my question is the post layout simulation is different from schematic simulation(eff=62% in schematic and eff=52% in post layout)??i have no idea what to do??
how can i modify the layout to fit the schematic simulation??
thanks in advance
Hi
i just have a problem in opening the layout file (can't open it for edit but for read only)
and i notice this warning message in terminal "warning file/root/cd.log file is already locked by some other process)
So please, do anyone have any solution???:cry:
thanks in advance
Hi
I have this DRC error (vertice is drawn off-grid)
what does this error mean?i have no information about it except the previous statement
can anyone help me???
thanks in advance
My problem is the bulk connection of nmos because my nmos is located in two wells, twell and nwell,
the twell is located inside the nwell (as i upload here) ,my question is
1-i think the twell is the bulk of the nmos/is this true??
2-how i connect the bulk of nmos(twell) to its source ( i...
hi
i use 0.18UM180FDKMFC-FDK
in my design i have to avoid body effect so i need to connect the bulk terminal of NMOS to its source
but the problem is the process is twin well
so can i use RF mos in the kit?it has 4 terminals (s,D,G ,B) , when i see RF transistor layout it has a layer called DNW...
Hi
i use virtuoso in simulation, i just want to know the threshold of the nmos i used??
i followed the following steps
-i performed dc analysis and save dc operation point
-from menu -->i choose annotate -->dc operating point
-i go to schematic and expect to find the vth of mos but i didnt find...
thanks for your help
i know that ,from transistor layout i can know if it is possible to connect its bult to source or not. if i find deep Nwell layer in the layout,so i can connect bulk to source but i don't know how i get this from Virtous
could anyone please tell me how i see transistor...
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