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equationwise , everything is correct. but my question is ..Please take the case of single MOS Transistor...let us take nMOS
when we fix Vds at max. (Vdd) suppose..... and increase Vg from 0 to Vdd...NMOS first inter into the saturation when Vg>= Vt. Equation satisfies these things... i...
yru... can you please give some documental proof of your views... i have discussed with few experts.. but none has satisfied me with proper answer and proof...
Things are not getting cleared but ..getting confused..bcz no book mention this thing how the single mos transistor directly (or...
means from device physics point of view... number of electrons (in NMOS) in the channel will be maximum in the initial stage itself(when we increase Vgs from or just at Vt at Vds be Vdd). but how it is possible... i mean population of electron should go from min. to saturation gradually. But we...
Thanks for explanations....
Please take the case of single MOS Transistor...
my actual question is that when we fix Vds at max. Vdd suppose..... and increase Vg from 0 to Vdd...NMOS first inter into the saturation when Vg>= Vt. Equation satisfies these things...even transfer Characteristics...
From CMOS Inverter voltage transfer characteristics, we see that nMOS transistor switches from Cut-Off (region - A ) to Saturation (region - B )
and pMOS transistor switches from Saturation (region - D ) to Cut-Off (region - E ).
This can be explained by equations and by calculating the Vds...
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