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Hello all. Can someone please give me some guidelines as to how to fabricate a conventional vertical mosfet (without silicidation) with variable channel length, source/drain junction at 200 nm, gate oxide thickness of 2 nm gate poly thickness of 150 nm using Athena. Thanks :)
Thank you dick_freebird for your reply. I might have stated my problem incorrectly...i have worked with atlas on simulating a n-mos device but for this assignment we have to simulate the fabrication process of a v-mos using athena. Will the docs have examples on ion implantation, diffusion...
Hi guys! I have an assignment on fabricating a conventional vertical mosfet (without silicidation) with variable channel length, source/drain junction at 200 nm, gate oxide thickness of 2 nm gate poly thickness of 150 nm. I have very limited knowledge of silvaco so a code along with explanation...
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