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Hi,
I have a doubt if there are any calibre settings to match transistor parameters exactly instead of matching there total widths.
Scenario 1: If my schematic has a nmos with total_width =25u, l=400n, fingers=1
m=1 and my layout has a nmos of total_width=25u, l=400n, fingers=5.
Scenario 2...
Re: well proximity error
Hi,
In simple terms, any well will have non-uniform concentration of ions which is a process related issue, bcoz of which devices within this well will have different Vth depending on the placement of device wrt to the boundry of the well.
Hence we have to place the...
Hi,
Why is that native nmos transistor cannot be placed within a Deep nwell.
I have a case in which the whole analog ckt is placed within a Deep nwell but I am not able to place a Native mos.
I am using UMC65.
Thanks in Advance.
hi,
It is a late reply but i thought i will throw some light on it .
you cannot put BJT within a deep nwell.it properties would change if done so and hence it does not get detected.
Solution
1.If the isolation required is substrate isolation thenuse a marker layer to avoid soft check.
2.If...
Let me re-phrase the question,
"The spacing from a nwell to a nmos diffusion region (N+ active outside the nwell)is required only because the regions extend during fabrication process or is there any other reason to it?" .
(And I am not talking about the well tie or N+ diffusion being enclosed...
hi ,
i have a basic doubt when a designer in schematic says he needs 2 multiplier and 3 fingers .......while doing the layout can we instantiate a transistor with 6 fingers..if no. what problem will arise .........
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