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Recent content by samyakgandhi

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    DDR4 pseudo open drain advantage

    following are some analysis i made: 1)pure open drain configuration is capable of achieving low power by eliminating current flow while in logic 1 state, but at the same time it suffers reduction in speed of operation compared to push/pull configuration which is capable of driving both the...
  2. S

    Problem with pulse flickering ?

    iyou can use an opamp as a comparator between your microcontroller pin and gate driver and give reference voltage as one input and the other one will be your pulse i.e. pin o/p...it should remove the flicker issue and perfect square pulse can be generated...
  3. S

    measuring Vth wrt temperature in Hspice

    thanks for reply...can u please tell me how to measure the beta of transistor...i am not able to find template for beta of mosfet in hspice manual..
  4. S

    measuring Vth wrt temperature in Hspice

    i want to measure vth of a MOS transistor wrt temp variations... i am using .meas dc vth vth(M0) at=.5 but this only displays for temp=25... i want to sweep from -55 to 125 in steps of 10 and want vth for these variations..
  5. S

    threshold voltage variation wrt temperature in MOS

    i am following cmos digital IC by sung mo kang...and carrying out simulations in Hspice to observe these variations.. from simulation results vth does decrease with increase in temp..
  6. S

    threshold voltage variation wrt temperature in MOS

    thanks for the reply... now there is one correction..Tox can not vary wrt temperature for a given temp. range for which the transistor is designed. so this rules out the 2nd point mentioned by me. so the dominating factor is depletion charge density which has to reduce for vth to reduce.. the...
  7. S

    threshold voltage variation wrt temperature in MOS

    how does Vt decrease with increase in temperature? 1) Vt is directly proportional to fermi potential which is proportional to T and inversely proportional to Na. 2) now Vt is proprtional to Tox and with increase in T, Tox decrease..But how?? coz Tox is device parameter... 3) Vt is also...

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