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Thanks for the document. But how an NMOS will be affected during implantation of Nwell , NMOS portion will be covered by photoresist during fabrication of Nwell.Please check the attachment.
Hi Hanspi & dick_freebird,
Thanks for the response...as mentioned above, its not a problem with my design I am having, its my doubt, How we will protect a transistor in such cases???
OOps!!! sorry...I dont know Scottish language...whats meaning of Slainte??, hope its not bad..:-)
Thanks for the reply. For the layout given to me supply voltage is 1.8V, the antenna violation is occurring in digital section, there I kept a diode with N-connected to the signal and P connected to...
1st Case Resistors are in serires so effective R = R+R+R+R = 4R
2nd Case two pair resistors are in series which is in parallel to each-other so effective R = 2R parallel to 2R => 2Rx2R/(2R+2R) = 4RXR/4R =R
so it is reduced by a factor of 4 .
Hi Slainte,
Thanks for clear explanation. During fabrication this diode doesn't play any role other-than a leakage path for the collected ions but during normal operation will it affect the circuit functionality?What sort of diode we should use if the signal is alternating(AC) and how to...
Hi All,
Please suggest me how to connect diodes to avoid Antenna Violation. I referred some books all are explaining it differently, some books suggesting to connect the N(cathode -ntype diffusion) of the diode to metal causing violation and P(anode- p substrate) to GND while some other book...
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