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The differential amplifier design methodology is not on top of my mind by here is how I would tackle it,
1. I have a certain gain and power requirements for the amplifier. From the DC power consumption, I could compute the DC bias current
2. Knowing the gain and a given load (RL) for the...
Also, what in your opinion should the term, HB.I_Probe1.i[0]-DC.I_Probe.i, give me when the input power and the resultant ac signal swing across the diode, is quite small.
May be I am using the term incorrectly. By static DC, I mean the DC current in the absence of any AC input.
I am attaching the results for order 5 and 31. Input power in each case is -50 dBm, which causes a 0.1mV peak ac signal at the diode input.
In case of transient analysis, what result...
There will be a static DC current due to the dc source Vb too, right? And I want to characterize only the device nonlinearity by looking at the magnitudes of various harmonic components. How else do I do that?
I did increase the HB order but that does not help.
Due to the DC bias voltage, there will be a static DC current through the diode (in the absence of RF input voltage), which I believe is captured by the DC analysis (i.e. the term DC.I_Probe1.i).
Due to the nonlinearity of the circuit, there will be a DC current through the diode (In the...
Ok but I dont think that *it* could be the cause of huge discrepancy, else it would reflect in the second harmonic term too.
The second harmonic current term is within 10% of what I calculate from diode IV equation. The DC term is orders of magnitude smaller.
I did not get your point. I am using either ideal DC blocks or ideal capacitors from ADS.
Nevertheless, the magnitude of second harmonic is consistent with what I mathematically calculate. I dont see any reason for the DC term to be different.
Also, I am assuming that HB.I_Probe1.i[0]...
Exactly. I am actually interested in computing the DC term due to the second order nonlinearity. I do so by calculating the difference HB.I_Probe1.i[0]-DC.I_Probe1.i.
The problem I am facing is that the magnitude of this extra DC current (due to 2nd order nonlinearity) is different from the...
gm is a small signal parameter of a transistor which is bias dependent. Since, it is not a model parameter, you will not find it in the transistor model.
Hello everyone,
I am simulating a schottky diode power detector in ADS. The schematic and the diode model are in attachment.
I am interested in computing the extra DC current due to the RF input (due to the square term) to further compute its voltage sensitivity. Hence, I use Harmonic balance...
Hello everyone,
I am working on the design of a square-law video detector. I have simulated the its output noise (in units of V/√Hz). I am wondering on how do I estimate the total output noise for a given video bandwidth. I need this to get an estimate of the minimum detectable RF signal...
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