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So it is operated in either saturation or cut off region but in between these two there is linear region (the intermediate region between the LOW and HIGH states of the transistor) and the transistor will obviously pass through that going from cut off to saturation and vice versa.How does that work?
Is the resonator a frequency sensitive device or is it a signal source?I believe its the former but why does a transistor needs resonator to operate as an oscillator(A resonator is just selecting a frequency,its not producing oscillation by itself)?A parallel oscillator just has the highest...
I am reading this paper on a mixer and here it says that a 10-50 ohms resistor must be added (look at the diagram on the left side) to improve stability.How would this improve stability is beyond me.
I have a HEMT oscillator and it is biased at a drain voltage of 1.5V and this DC voltage at drain is converted into AC because of negative resistance at the output.What value of output signal should I expect?Would the output signal be 1.5V peak to peak?There are no losses in between.
Here's what I want to know:
I designed a low nose amplifier at 5.5GHz recently and here's what I did.I had to set my Reflection coefficient looking toward the source=optimum source reflection coefficient for obtaining minimum noise figure and I used conjugate matching at the load for obtaining...
I am designing a single ended FET mixer using atf21170 and I have isolated the RF and LO port by a bandpass filter,at the output I am using a 6th order chebyshev low pass filter.The major problem that I am facing is that of designing the matching section at the input.I don't know how to begin...
Without the negative battery at collector the transistor is in saturation and a large Ib makes much sense.But the with battery operation gets me confused.The transistor operates in active region with Vec=2V but Ic is not equal to hFE*Ib.Ib is very low and that is what I cannot understand.
I have always found it very easy to design with dual supplies.This circuit uploaded by me is operating in active region because Vec=3V.Mostly in such circuits very negligible base current flows (don't know why).I find this very strange because the base current controls the collector current.On...
Firstly,I want a single gate FET model that can operate at 5.5GHz.I want to use it as a mixer.Also can anybody guide me which considerations should be kept in mind while biasing it.
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