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perhaps you can use the current Igm which bias the input device, generates another current Iro to bias the output device. The relationship between Igm and Iro is,
Iro=Ksqrt(Igm).
Now I have a project to improve EMC immunity for a LDO, How can I to improve it?
A customer have a MCU chip want to use our IP( LDO). However, the application envirement has a motor that generates EMC. So they want us to improve EMC le immunity of our LDO ip, but for cost controlling they want...
It seems you have two grouds: VSS1 and VSS2. If there is only PSUB, DRC will give a violation"pwell soft connected". you should add PSUB2 to isolate the two ground.
calaulate metal width vs current
mdcui is right~~
And for different temperature, there is a coeffient in DRC file. So you can get other temperature electromigration by the coeffient multiple 110 degree electromigration
Re: ESD help
Hello Chang,
1) For IO to IO (digital) ESD, NMOS of output driver is the key device for ESD zap. So, the negative and positive modes are both failed shows that the output inverter driver should be re-configured or layout it carefully. Failure analysis is good method to find the...
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