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Recent content by mikersia

  1. M

    frequency stable oscillator

    Vackar oscillator seems to be type of low noise LC oscillator. In monolithic implementation it will lose stability along with componenets drift.
  2. M

    frequency stable oscillator

    To cancel one mechanizm of instability by other you have to provide compensation region through whole PVT range, including statistical mismatches. Typically each instability factor is uncorrelating with others. So many criterial task is very very complex. It have to include a lot of...
  3. M

    frequency stable oscillator

    To design 1ppm@10MHz non crystal oscillator - unrealistic task from my viewpoint. Even with sophisticated digital calibration. You have to provide a stable (<0.2ppm) electrical reference to allow feedback compensate drift.
  4. M

    ESD protection for negeative voltage Pin?

    Depends on available characterized protection structures. If floating (in N-well) zener diodes with BV=5...8V are available then back-to-back diodes can be used. Mirrored SCR can also be used to provide bipolar protection.
  5. M

    10-bit SAR ADC, Unit-Cap size, Poly-Poly Caps

    For speed below <10KSPS sigma-gelta ADC is about standard. It provide reliable in noisy environment, accurate and flexible solution, - tardeoff between Resolution/Speed is achieved by digital harware modification only. Best to use 2-nd order SDM & 3-d order decimation filter, but if you have big...
  6. M

    Current-steering DAC NMOS or PMOS switch?

    switch has the same type, as current source, because any current mirroring will means increasing of error and speed reduction. Choice between PMOS and NMOS is defined by design tradeoff
  7. M

    Serial I/O vs Parallel I/O

    Not. Serial-to-parralel conversion add excessive hardware, which is complicating design.
  8. M

    I/O cells (Similarities and differences)

    All I/O cell are designated to connect internal signals to external world, providing necessary level of protection from ESD (Electrical Static Discharge) or EOS (Elctrical OverStress) events. This is common feature of all I/Os. All other are differences. Digital I/O can't to transfer analog...
  9. M

    standard I/O cells. Need for I/O as standard cells

    most of IC-to-IC, IC-to-apparature interfaces are standartized (see PCI, TTL, CML,... standards in JEDEC documents). They define electrical and logical requirements to physical parts (i.e. I/O) of the interfaces,- like input/output switching levels, loading conditions,... That is why there are...
  10. M

    Help:Very low power CMOS SAR ADC with INV as the comparator

    right, Inv1 & Inv2 are two amplifiers with offset correction
  11. M

    Help:Very low power CMOS SAR ADC with INV as the comparator

    From analog viewpoint an inverter can be assumed as single-ended comparator with fixed and pure defined threshold voltage, strongly depending on PVT(i.e. Vdd/2+Vos, where Vos(PVT) ~ +/-30%Vdd). To reduce this dependence an offset periodical correction method is used. That is devision a...
  12. M

    ESD on-chip protection circuit

    A protection have to included into each pin of your IC. Supply pad protection plus diodes protection in each signal pin allow to provide ESD path for any combination of stressed pins.
  13. M

    Ring oscillator as a test structure

    typically a number of ring oscillator (RO) types are implemented in test chip: ROs with inverters, buffers, gates (nand, nor,...); RO with different fanouts (FO=1, FO=4,...). RO self oscillating frequency at different conditions (i.e. PVT) give a most timing information dealing with library...
  14. M

    Linearity of MOS transistor_the meaning

    it might be dealing with missmatch of MOSFETs (say better 0.1%), providing 10-bit linearity e.g. in current steering DAC
  15. M

    Process Variations and Timing effects

    grouth of Vth at the low temperatures will increase delay, while mobility increasing produce an opposite effect. Question is where it will ballance each other.

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