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According to ohm's law, Vds=Ron*Ids, so the only way to reduce the drain-source voltage in ohmic region is to increase the transistor size. When the transistor is off, peak of Vds is 3.56 Vdd. So designers must be careful of gate oxide breakdown phenomenom. If the inductors value of UMC...
MEMS inductors are same as other on-chip inductors, with one difference that in MEMS inductors, the dielectric is air which presents lower dissipation. So make them more suitable for all application. Their drawback is their cost.
Agillent ADS is so suitable for RF and microwave design and give RF designers special tools to design and optimize these circuits. Of course HSPICE can simulate adequately for your frequency range.
The waveforms are OK but the bounces are unusual. One thing you should remember, the transistor operates in ohmic or cutoff region. So the current does not depent on the transistor size. The current of the transistor is dictated by the feed-inductance current and output current. So if you...
Here is my own design. The transient response of Class-E PAs with finite-DC feed inductance are faster than those with RF chock, so make them more suitable for "envelope elimination and restortion" technique.
Zopeon, As I know the MIM capacitance in 0.18um TSMC standard design is in femtofarad range, so there is no problem with 0.3pf capacitance. But remember that original class-E components value introduced in literatures are valid for designs for output filters with quality factor more than 10. So...
Class-A,AB,B, and C are transconductance amplifiers and included in linear range PAs. Among these amplifiers Class-C has highest efficiency but lowest linearity. There is a trade-off between linearity and efficiency. For high efficiency you can choose switch-mode amplifiers which are unlinear...
The load resistance for this design is 72.1 ohm. you should consider the dissipations. For 100% efficiency circuit draw 8mA from 1v DC supply but taking the dissipations in account this value is greater. The circuit component values are shown in the attached figure. By the way as for class-e PAs...
I want to design and implement a class-e power amplifier using discrete elements. can anyone help me to find a n-channel mosfet with low Ron (around 100mohms), brakdown dvoltage of 20-30volte and crr (Cgd) of 1pf to operate in 200-250MHz with low input power. Thank you for your favor in advance.
How could I make a 5 channels controller for Plane that can sustains less than 10 killometers , Anybody can help by introducing website or papers?
Thanks
Engineering Science
http://hyperphysics.phy-astr.gsu.edu/hbase/exprob/exmec.html
perhaps it can be useful for you , for mechanics problems and other field of physics.
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