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I try to rephrase the question.
I always thought that the technology parameter (un*Cox) was a constant of the circuit (after having doped the semiconductor un is constant, and Cox depends only on the thickness of the insulator), so I cannot understand why I get different values from the...
Hello,
I am simulating the characteristic of a NMOS transistor with HSPICE, and I am also calculating the technology parameter knowing Id and gm, with the formula
un*Cox=gm^2/2Ids *(L/W) (I am operating in saturation).
Increasing both the W and the L of the transistor of the same ratio (like...
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