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Recent content by franck

  1. franck

    calibre PEX for postsimulation,pls

    Hi, 1) Does the calibreview contain your intentional devices and parasitics? 2) Try to delete (save it in another name before) .../template/"cellname".stl. This contains the description of all the ports in your design. It should be regenerate on your next run. Hope it helps. Franck
  2. franck

    calibre PEX for postsimulation,pls

    Hi, If you are running PEX, I guess you also have the Calibre documentation installed. So search for "calibreview" in the calibre extraction documentation. Everything is explained there. Franck.
  3. franck

    calibre PEX for postsimulation,pls

    Hi, I think you should use the calibreview to do your post layout simulation. It's one of the output format of PEX. It's particulary easy to use with a config view. Franck.
  4. franck

    "_mac" devices in TSMC90

    Hi, What is the difference between a nch device and a nch_mac device in TSMC90 technology? Thanks for your help. Franck
  5. franck

    Heat dissipation in power amplifier layout technique

    Hi, Thanks a lot for your help. How would you place those dummy metal patterns? Interleaved in the transistor? Around the transistor? Would that help to stack every metals in the unit pattern? Do you confirm that for a same size of transistor the bigger the conducting/switching region layout is...
  6. franck

    Heat dissipation in power amplifier layout technique

    Hi, I'm doing a layout of a power amplifier and I'd like to know if there is any particular techniques (obvious or not) to help heat dissipation. I mean what could I do in the layout of the active part of the PA? Thanks, Franck.
  7. franck

    Transistor is one direction

    Hi, The main reason you need to think about mask shift is for matching. 45 degree angle for gates is used in digital layout. You don't really need to take care of matching in digital. And by the way I don't think a mask shift would be big enough to not process poly over the desired active area...
  8. franck

    The importance of tap in standard cell layout

    Re: Standard Cell Layout Hi, Really strange question. A mos is a 4 terminals devices: gate, drain, source and bulk. What we call "tap" in layout is the bulk connection. It's for that you always have substrate tie and nwell tie in a standard cell. As the others reply you need to go back or...
  9. franck

    Transistor is one direction

    Hi, The main reason for placing devices in the same direction is masks shift during processing. Franck.
  10. franck

    Using mimcap with the chartered 0.13um RF technology

    chrt13rf mimcap Has anyone used mimcap with the chartered 0.13um RF technology? If so did you have any problems? Thanks.
  11. franck

    IBM 0.13um CMOS layout question.

    0.13um cmos Hi, 1) I suppose you have LVS problem with your nfet. Could you explain what is this problem? 2) Is this mos come with a deep nwell or anything like that (I mean in the layout)? 3) Did you try to LVS this nfet only in a test case cell? 4) Did you try to create a "flat tie" just by...
  12. franck

    IBM 0.13um CMOS layout question.

    ibm subc Hi, I don't know the cmrf8sf technology but anyway for every technology you need PTAP to connect the B terminal of a NMOS. What are "subc, nTiedown", type of contact? When you choose your contact just make sure it's just active area, contact, m1 and of course P implant!! Franck.
  13. franck

    What are Test Chips in Layout?

    Re: Test Chip?? test of part of the production chip test of prototype test of a large range of devices as mos, bipolar, resistor, inductor, capacitor ... test of memories You should pad all those structures to be compliant with your probe station
  14. franck

    What is VLW window function after running DRC or LVS?

    Re: VLW window The VLW contains all the layers used by Assura in the drc file. Look at this file and you'll understand. It is usefull when you don't understand an error. It is also usefull to create your own LVS or DRC file. Franck.

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