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Recent content by chinmoy.khaund

  1. C

    RDSon comparison between 2 devices

    I have 2 device with specifications as Chip size area: 10.24mm2 RDSon: 0.5 ohm (Vg=10v and Id=1A) Chip size area: 23.36mm2 RDSon: 0.14 ohm (Vg=10v and Id=12A) Now I am carrying out TCAD simulation for these 2 devices, my purpose is to know which 1 device in these two specification is a Super...
  2. C

    Changing parameters in file sdevice_Silicon.par

    can you send me your .par file contents and also the physics section of your sdevice code
  3. C

    Gamma radiation example in Sentaurus TCAD

    File { Grid = "@grid@" Doping = "@doping@" Param = "@parameter@" Output = "@log@" * Plot = "@dat@" Current = "@plot@" } Physics { EffectiveIntrinsicDensity( Nobandgapnarrowing ) Recombination( SRH ) #if @<DOSERATE>@ != 0 * Irradiation time 20...
  4. C

    Temperature plot for UIS simulation in medici.

    I have plotted temperature profiles for UIS simulations single pulse using both medici and sdevice. What is the problem that u are facing.
  5. C

    Depltion mode MOSFET- Vth simulation

    Hello everybody, I am running simulation for a depletion mode NMOSFET. I am using ISE-TCAD, I want to ramp the gate and drain voltage from -5V to +5V , but I am not able to do so as there is error. At the begging of the code in the electrode section I defined the gate and drain voltage level to...
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