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Hi,
I am asking about SR_DPO layer. It is mentioned that it does not form any device.Why is it so? and if we use SR_DPO for dummy transistors will they be replaced by metal during gate last process?
Thanks,
Bhagyasree
Hi Schowdary,
In Design Rule file it is mentioned to use SR_DPO for dummies on shared OD and floating gate is also allowed. and is also mentioned that if we use SR_DPO there will not be any active device formation.
can we use normal poly for dummy transistors?
In 28nm gate last process is used...
Hi Prashanthanilm,
sorry that i dont have any documents.
Dummy poly used to avoid etching of original poly has to be fabricated right. only then it will be protecting the original poly.and in 28nm dummies are to be used for compensating LDE effects. and what poly mean PO or DPO or SR_DPO is...
Hi,
Presently am working in TSMC 28nm technology. I have few doubts here
--> what is the difference in layers actual Poly and DOP and SR_DOP?
--> are the dummy poly layers fabricated?
--> should we use dummy poly/normal poly for dummy transistors placed around active transistors for minimizing...
hi,
In well proximity effect the concentartion of nwell is not uniform so transistors placed at different locations will have different Vt,Id. Is there any differnce in Vt or Id for source oriented and drain oriented transistors?
Thanks,
bhagyasree
hi,
can any one tell me why fuse material/CTM layer is used in mim capacitors..
And why the capacitor is directly not formed between any two metal layers? why is it formed between one metal and
an extra layer?
Thanks
Hi,
I think the matching pattern is not correct.
And u said it to be a current mirror.So u cannnot share the drain of M2 and M22. so u cant even share M22 source/drain.
If u share M22 drain and not sharing M2 drains then there will be sti effect.
Do not share source drain .for current mirror...
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