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Hi,
what is the specific command to tell diva extractor that two ground nets ('vssd' and 'vssa') are similar and that no multiple stamped connections exist. The solution to draw a supporting layer around one ground net isn't provided by the pdk.
Thanks
The circuit itself must be reconsiderd. The output will response depending on the time constant in the feedback. The output swing is depending on R and the photo current which seems to be very low. But you are right. 320M makes no sense.
Hey,
so you use a diode (in your case the led) also in the reverse biasing mode. Due to this biasing the minority carrier density is reduced by the boltzman factor so only a few carrieres are left which are available for a current. So you see, led emitts in the forward biasing mode photons while...
Hi,
it is an photodiode, not a led. The Photodiode need to be biased in reverse operation mode. So the dc voltage at the non inverting input should be higher than 0V.
Compile your hdl code in 5x structure. (e. g.ncvhdl -use 5x) for checking for errors and including in cds.lib. If your code is available in library manager though cds.lib you can create a config cell and choose the right cell view in hierachy editor. After this you can simulate this config cell...
saturation formula is I=K/2*W/L*(Vgs-Vth)^2 and transconductance is gm=partial(I)/partial(Vgs)=K*W/L*(Vgs-Vth)
rearrange saturation formula gives Vgs-Vth=sqrt(2*I*L/(K*W)), inserted gives gm=sqrt(2*I*K*W/L) and finally gm=2*I/(Vg-Vth) (a very handy formula!)
Hi superleaf,
please add a schematic including the operation point of the internal circuitry of the opamp. You can do this by annotate operation point and voltage in ADE.
Because of feedback the voltage on inverting input node is equal to Vref. So voltage drop at R13 is also Vref. This sets...
Vth is a technology parameter which is defined bydoping concentration, implantation dosis of poly silicon and thickness of gate oxid. By applying an postive voltage at the gate, the surface of the semiconductor is inverted. Until the gate voltage is lower than vth the semiconductor is in weak...
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