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it can, definitely. but its redundant. because channel leakage no longer plays a dominant role, its the thin gate oxides and short channel effects which come into play.
but i want a paper on some sort of analysis done on the same
hey,
could anyone please help me out with two things??
i have read in various documents that well biasing is not feasible below 65nm. However, I haven't managed to find any papers that prove these claims.
also, i know that threshold voltage affects both timing and leakage. but could you...
that's true.. but what about simple power dissipation of the clock signal due to the transmission wire resistance/impedance?? as heat or other factors?? is that really negligible?? and wouldnt that depend on the average clock voltage over one period?? i'm neglecting the cmos inverter in my...
hi,
i wanted to know if the duty cycle of the clock signal directly affects the power dissipation??
the duty cycle would define the average voltage over one clock period, so the power loss occurring due to clock power dissipation would depend on the same, wouldn't it??
Any help would be...
"When reducing the gate length of an MOS transistor, the depletion regions around the source and drain have also to be reduced, to avoid effects such as charge sharing and punchthrough. To scale down the depletion regions, the doping oncentration of the substrate can be increased and the biases...
modifying the def file isnt an option either because the netlist always has priority over the def.. so encounter will ignore cell conversions when it loads the netlist..
nope, timing is not a factor. This is for complete leakage power analysis. All HVT's should theoretically give me minimum...
Hi
I need an efficient way to convert all the SVT cells in an existing design to HVT cells.
I already know about a command 'ecoChangeCell' which performs this function. I have used it in a simple loop which checks each instance in the design, determines if it corresponds to an SVT cell and if...
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