Max_spb
Joined: 12 Jun 2008
Posts: 4
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 12 Jun 2008 16:53 Easy TCAD question |
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Hi all,
I am writting my diploma about TCADs and have a problem in a practical part.
I must simulate mosfet. And I have a process list of the real one.
I use Sentaurus Process.
And I don't know how to realize phosphorus diffusion to silicon(to generate source and drain regions) with 5e19 concentration, 900C temperature and 10 min.
Silvaco uses:
diffus time=10 temp=900 c.phos=5e19
and that's all,so easy...
But on sprocess 'diffuse' command haven't got any params for arbitrary material(phosphorus), only O2,H2O,N2 and some another.
gas_flow works with they only too.
I know, that it is trivial question, but I am novice.
Please,help!
P.s. Sorry for my English I am from Russia 
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